IPA60R190C6XKSA1 vs IPP60R190P6XKSA1 Comparison
Detailed side-by-side comparison of IPA60R190C6XKSA1 by Infineon and IPP60R190P6XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPA60R190C6XKSA1 | IPP60R190P6XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $1.02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS C6 | CoolMOS P6 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 20.2 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD, Tc=25C) | 34 W | β |
| On-State Resistance (RDS(on)) | 190 mOhm at VGS=10V, ID=9.5A | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | β |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typ] | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C (junction) |
| Package | PG-TO220-FP (TO-220 FullPAK, 3+tab) | PG-TO220-3 (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Tab Isolation | Fully isolated (4 kV) | β |
| RoHS Status | Compliant | Compliant |
| Lead Free | Yes | β |
| Technology | β | Superjunction (SJ) MOSFET |
| Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Tc=25C | β | 20.2 A |
| On-Resistance RDS(on) max at 25C | β | 190 mOhm |
| Total Power Dissipation (Ptot) at Tc=25C | β | 151 W |
| Gate Drive Voltage (typical) | β | 10 V |
| Lead-Free | β | Yes |
| MSL Level | β | Not applicable (through-hole) |
| Product Variant | β | XKSA1 (industrial grade, tube pack) |