IPB014N06NATMA1 vs ISC045N03L5SATMA1 Comparison
Detailed side-by-side comparison of IPB014N06NATMA1 by Infineon and ISC045N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB014N06NATMA1 - 60V 180A OptiMOS 5 N-Channel MOSFET | Infineon
IPB014N06NATMA1 β ActiveInfineon
ISC045N03L5SATMA1 - 30V 4.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | IPB014N06NATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.10 | $0.51 |
| Transistor Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID) at Ta | 34 A | β |
| Continuous Drain Current (ID) at Tc | 180 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 214 W | β |
| On-Resistance RDS(on) max | 1.4 mΞ© at VGS=10V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TO263-7 (D2PAK-7) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (trench-gate) | OptiMOS 5 / Trench |
| Avalanche Rating | 100% avalanche tested | β |
| Qualification | JEDEC qualified for target applications | β |
| Primary Application | Synchronous rectification, motor control | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | ISC045N03L5SATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25Β°C | β | 18 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.5 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2 V @ ID=250 Β΅A |
| Total Gate Charge (Qg) | β | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | β | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Power Dissipation (PD) at TC=25Β°C | β | 30 W |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C |
| RoHS Status | β | Compliant |