IPB020N08N5ATMA1 vs BSC009NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of IPB020N08N5ATMA1 by Infineon and BSC009NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC009NE2LS5IATMA1
BSC009NE2LS5IATMA1 - 25V 0.95mΞ© 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 β ActiveSpecification Comparison
| Parameter | IPB020N08N5ATMA1 | BSC009NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.45 | $1.02 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOSβ’ 5 (25V/30V family) |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Tc=25C | 120 A | β |
| Pulsed Drain Current (IDM) | 480 A | β |
| Maximum RDS(on) at VGS=10V | 2.0 mOhm | β |
| Gate-Source Voltage (VGS) max | +/- 20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Power Dissipation (PD) at Tc=25C | 300 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC value, approx 0.5 C/W] | β |
| Package | PG-TO263-3 (D2PAK-2) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Energy Rated (EAS) | [DATA_NEEDED: EAS value] | β |
| Configuration | Single N-channel, 3-pin (2+Tab) | Single with built-in diode |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Manufacturer Part Number | β | BSC009NE2LS5IATMA1 |
| Manufacturer | β | Infineon Technologies |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) max | β | 25 V |
| Gate-Source Voltage (V_GS) max | β | 20 V |
| Gate-Threshold Voltage V_GS(th) typ | β | 1.7 V (range 1.0-2.0 V) |
| R_DS(on) max @ V_GS=10V | β | 0.95 mΞ© |
| Continuous Drain Current (I_D) @ T_A=25Β°C | β | 40 A |
| Continuous Drain Current (I_D) @ T_C=25Β°C | β | 217 A (pulsed, datasheet rating) |
| Power Dissipation (P_D) @ T_A | β | 2.5 W |
| Power Dissipation (P_D) @ T_C | β | 74 W |
| Total Gate Charge (Q_G) typ | β | 23 nC @ V_GS=0-4.5V |
| Input Capacitance (C_iss) typ | β | 3200 pF |
| Operating Temperature Range | β | -55Β°C to +150Β°C |
| Terminal Finish | β | Matte Tin (e3 per JESD-609) |
| Number of Terminals | β | 8 |