IPB020N10N5LFATMA1 vs BSC023N08NS5SCATMA1 Comparison
Detailed side-by-side comparison of IPB020N10N5LFATMA1 by Infineon and BSC023N08NS5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB020N10N5LFATMA1 - 100V 176A 2mΞ© OptiMOS 5 Linear FET | Infineon
IPB020N10N5LFATMA1 β ActiveInfineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΞ© OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 β ActiveSpecification Comparison
| Parameter | IPB020N10N5LFATMA1 | BSC023N08NS5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.62 | $1.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Linear FET | β |
| Technology | N-Channel Enhancement-Mode Power MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) max | 100 V | β |
| Continuous Drain Current (Tc) | 176 A | β |
| Silicon-Limited Drain Current | 289 A | β |
| Package-Limited Drain Current | 120 A | β |
| Pulsed Drain Current (VDS=56V, tp=10ms) | 10.2 A | β |
| On-State Resistance RDS(on) max | 2.0 mΞ© | β |
| Total Power Dissipation (Tc) | 313 W | β |
| Package | PG-TO263-3 (D2PAK) | PG-WSON-8-2 (SuperSO8 DSC) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Marking Code | 020N10LF | β |
| Part Number | β | BSC023N08NS5SCATMA1 |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 202 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 188 W |
| On-State Resistance RDS(on) typ. | β | 2.3 mΞ© at VGS=10 V, ID=50 A |
| Gate Threshold Voltage VGS(th) typ. | β | 3.8 V |
| Total Gate Charge Qg | β | 98 nC at VGS=10 V |
| Input Capacitance Ciss | β | 6.8 nF |
| Output Capacitance Coss | β | 74 pF |
| Thermal Resistance RthJC | β | 0.72 K/W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |