IPB020N10N5LFATMA1 vs IAUC120N06S5L011ATMA1 Comparison

Detailed side-by-side comparison of IPB020N10N5LFATMA1 by Infineon and IAUC120N06S5L011ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC120N06S5L011ATMA1

IAUC120N06S5L011ATMA1 - 60V 1.1mOhm 310A OptiMOS 5 MOSFET | Infineon

IAUC120N06S5L011ATMA1 βœ“ Active

Specification Comparison

Parameter IPB020N10N5LFATMA1 IAUC120N06S5L011ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.62 $2.10
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 Linear FET OptiMOS 5 60 V (S5 generation)
Technology N-Channel Enhancement-Mode Power MOSFET β€”
Drain-Source Voltage (VDS) max 100 V β€”
Continuous Drain Current (Tc) 176 A β€”
Silicon-Limited Drain Current 289 A β€”
Package-Limited Drain Current 120 A β€”
Pulsed Drain Current (VDS=56V, tp=10ms) 10.2 A β€”
On-State Resistance RDS(on) max 2.0 mΞ© β€”
Total Power Dissipation (Tc) 313 W β€”
Package PG-TO263-3 (D2PAK) PG-TDSON-8-53 (TDSON-8 FL, 5 mm Γ— 6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +175 Β°C β€”
Gate Threshold Voltage VGS(th) typ 2.5 V β€”
RoHS Status Compliant Compliant
MSL Level 1 1 (per JEDEC J-STD-020)
Marking Code 020N10LF β€”
Polarity / Channel Type β€” N-Channel
Drain-Source Voltage (V_DS) β€” 60 V
Gate-Source Voltage (V_GS) β€” [DATA_NEEDED: max V_GS rating]
Continuous Drain Current (I_D) β€” 310 A (Tj), 120 A marketing
R_DS(on) max β€” [DATA_NEEDED: R_DS(on) at V_GS = 4.5 V]
Power Dissipation (P_D) β€” 188 W at T_C = 25 Β°C
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Automotive Qualification β€” AEC-Q101 qualified
Avalanche Energy Rated β€” Yes (EAS)

Datasheets & Resources

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