IPB020N10N5LFATMA1 vs IPD70N10S312ATMA2 Comparison

Detailed side-by-side comparison of IPB020N10N5LFATMA1 by Infineon and IPD70N10S312ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB020N10N5LFATMA1 IPD70N10S312ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.62 $0.69
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 Linear FET β€”
Technology N-Channel Enhancement-Mode Power MOSFET OptiMOS-T Power-MOSFET (N-Channel)
Drain-Source Voltage (VDS) max 100 V β€”
Continuous Drain Current (Tc) 176 A β€”
Silicon-Limited Drain Current 289 A β€”
Package-Limited Drain Current 120 A β€”
Pulsed Drain Current (VDS=56V, tp=10ms) 10.2 A β€”
On-State Resistance RDS(on) max 2.0 mΞ© β€”
Total Power Dissipation (Tc) 313 W β€”
Package PG-TO263-3 (D2PAK) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 Β°C to +175 Β°C -55C to +175C
Gate Threshold Voltage VGS(th) typ 2.5 V β€”
RoHS Status Compliant Compliant
MSL Level 1 1 (unlimited floor life)
Marking Code 020N10LF β€”
Part Number β€” IPD70N10S312ATMA2
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID, Tc) β€” 70 A
Power Dissipation (Ptot, Tc=25C) β€” 125 W
On-State Resistance RDS(on) β€” [DATA_NEEDED: typical RDS(on) at VGS=10V]
Gate-Source Voltage (VGS) β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical value]
Pin Count β€” 3 (Gate, Drain, Source)
Channel Type β€” N-Channel Enhancement Mode
Avalanche Rated β€” Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote