IPB020NE7N3GATMA1 vs BSC042NE7NS3GATMA1 Comparison
Detailed side-by-side comparison of IPB020NE7N3GATMA1 by Infineon and BSC042NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS
IPB020NE7N3GATMA1 β ActiveInfineon
BSC042NE7NS3GATMA1
BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon
BSC042NE7NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB020NE7N3GATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.31 | $1.24 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020NE7N3GATMA1 | BSC042NE7NS3GATMA1 |
| Technology | OptiMOS 3 N-Channel Power MOSFET | OptiMOS 3 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 75 V | 75 V |
| Continuous Drain Current (ID) at Tc | 120 A | 100 A |
| Power Dissipation (PD) at Tc | 300 W | 125 W |
| On-State Resistance RDS(on) | 2.0 mΞ© typical (per part number code) | β |
| Package | PG-TO263-3 (DΒ²PAK, TO-263AB) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single | β |
| Operating Temperature Range | -55C to +175C (junction) | -55C to +150C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | β |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Avalanche Rated | Yes (per OptiMOS 3 family datasheet) | β |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | β | 19 A |
| RDS(on) max at VGS=10V | β | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | β | 1.7 V |
| Power Dissipation (PD) at Ta | β | 2.5 W |