IPB020NE7N3GATMA1 vs BSC054N04NSGATMA1 Comparison
Detailed side-by-side comparison of IPB020NE7N3GATMA1 by Infineon and BSC054N04NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS
IPB020NE7N3GATMA1 β ActiveInfineon
BSC054N04NSGATMA1
BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon
BSC054N04NSGATMA1 β ActiveSpecification Comparison
| Parameter | IPB020NE7N3GATMA1 | BSC054N04NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.31 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB020NE7N3GATMA1 | BSC054N04NSGATMA1 |
| Technology | OptiMOS 3 N-Channel Power MOSFET | OptiMOS 3 (N-Channel Trench MOSFET) |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 75 V | 40 V |
| Continuous Drain Current (ID) at Tc | 120 A | β |
| Power Dissipation (PD) at Tc | 300 W | β |
| On-State Resistance RDS(on) | 2.0 mΞ© typical (per part number code) | β |
| Package | PG-TO263-3 (DΒ²PAK, TO-263AB) | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single | β |
| Operating Temperature Range | -55C to +175C (junction) | -55C to +150C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | β |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (per OptiMOS 3 family datasheet) | β |
| Continuous Drain Current (ID) at Tc=25C | β | 81 A |
| Continuous Drain Current (ID) at Ta=25C | β | 17 A |
| On-Resistance RDS(on) max at VGS=10V | β | 5.4 mOhm |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Power Dissipation at Tc=25C | β | 57 W |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Gate Drive Voltage (recommended) | β | 10 V |
| Lead-Free Reflow | β | Yes |