IPB020NE7N3GATMA1 vs IPB107N20N3GATMA1 Comparison

Detailed side-by-side comparison of IPB020NE7N3GATMA1 by Infineon and IPB107N20N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB020NE7N3GATMA1 IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS

IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS

IPB020NE7N3GATMA1 βœ“ Active

Specification Comparison

Parameter IPB020NE7N3GATMA1 IPB107N20N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.31 $1.18
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPB020NE7N3GATMA1 β€”
Technology OptiMOS 3 N-Channel Power MOSFET OptiMOS 3 trench MOSFET
Polarity N-Channel β€”
Drain-Source Voltage (VDS) 75 V 200 V
Continuous Drain Current (ID) at Tc 120 A 88 A
Power Dissipation (PD) at Tc 300 W β€”
On-State Resistance RDS(on) 2.0 mΞ© typical (per part number code) β€”
Package PG-TO263-3 (DΒ²PAK, TO-263AB) PG-TO263-3 (D2PAK)
Mounting Type Surface Mount Surface Mount
Configuration Single β€”
Operating Temperature Range -55C to +175C (junction) [DATA_NEEDED: Tj max and operating range]
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) min/typ/max] β€”
Gate Charge Qg [DATA_NEEDED: total gate charge] β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
Avalanche Rated Yes (per OptiMOS 3 family datasheet) β€”
Product Family β€” OptiMOS 3
Transistor Type β€” N-Channel MOSFET
Maximum Power Dissipation (Pd) at Tc β€” 300 W
On-Resistance RDS(on) at VGS=10V β€” 9.6 milliohm (typical, per third-party listing)
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical/range]
Pin Count β€” 3 (Drain, Source, Gate) + Tab

Datasheets & Resources

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