IPB021N10NM5LF2ATMA1 vs IPB020N08N5ATMA1 Comparison
Detailed side-by-side comparison of IPB021N10NM5LF2ATMA1 by Infineon and IPB020N08N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΞ© Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 β ActiveSpecification Comparison
| Parameter | IPB021N10NM5LF2ATMA1 | IPB020N08N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.75 | $1.45 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS 5 Linear FET 2 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D) at T_C=25Β°C | 176 A | β |
| Continuous Drain Current (I_D) at T_A=25Β°C | 30 A | β |
| R_DS(on) Maximum | 2.1 mΞ© | β |
| Gate-Source Voltage (V_GS) Maximum | Β±20 V [DATA_NEEDED: absolute max rated V_GS] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | β |
| Power Dissipation (P_D) at T_C=25Β°C | 375 W | β |
| Power Dissipation (P_D) at T_A=25Β°C | 3.8 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C [DATA_NEEDED: confirm from datasheet operating junction range] | β |
| Package | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | PG-TO263-3 (D2PAK-2) |
| Mounting Type | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | β |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | OptiMOS 5 (N-channel trench MOSFET) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | [DATA_NEEDED: MSL level] |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at Tc=25C | β | 120 A |
| Pulsed Drain Current (IDM) | β | 480 A |
| Maximum RDS(on) at VGS=10V | β | 2.0 mOhm |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at Tc=25C | β | 300 W |
| Operating Junction Temperature | β | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC value, approx 0.5 C/W] |
| Avalanche Energy Rated (EAS) | β | [DATA_NEEDED: EAS value] |
| Configuration | β | Single N-channel, 3-pin (2+Tab) |