IPB021N10NM5LF2ATMA1 vs IPB081N06L3GATMA1 Comparison
Detailed side-by-side comparison of IPB021N10NM5LF2ATMA1 by Infineon and IPB081N06L3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΞ© Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 β ActiveInfineon
IPB081N06L3GATMA1 - 60V 50A OptiMOS 3 N-Channel MOSFET | Infineon
IPB081N06L3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB021N10NM5LF2ATMA1 | IPB081N06L3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.75 | $0.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Linear FET 2 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D) at T_C=25Β°C | 176 A | β |
| Continuous Drain Current (I_D) at T_A=25Β°C | 30 A | β |
| R_DS(on) Maximum | 2.1 mΞ© | β |
| Gate-Source Voltage (V_GS) Maximum | Β±20 V [DATA_NEEDED: absolute max rated V_GS] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | β |
| Power Dissipation (P_D) at T_C=25Β°C | 375 W | β |
| Power Dissipation (P_D) at T_A=25Β°C | 3.8 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55 C to +175 C (junction) |
| Package | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | β |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | OptiMOS 3 (low-voltage power MOSFET) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | 1 (unlimited) |
| Series | β | OptiMOS 3 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tc=25C | β | 50 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current rating] |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | 1.2 V min, 2.1 V typ, 2.6 V max |
| On-Resistance RDS(on) at VGS=10V | β | 8.1 mOhm typical |
| Maximum Power Dissipation (Pd) at Tc=25C | β | 79 W |
| Number of Pins | β | 3 |
| Pin Configuration | β | Gate / Drain / Source (D2PAK standard) |