IPB021N10NM5LF2ATMA1 vs IPD50N04S408ATMA1 Comparison
Detailed side-by-side comparison of IPB021N10NM5LF2ATMA1 by Infineon and IPD50N04S408ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΞ© Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 β Active
Specification Comparison
| Parameter | IPB021N10NM5LF2ATMA1 | IPD50N04S408ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.75 | $0.69 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Linear FET 2 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D) at T_C=25Β°C | 176 A | β |
| Continuous Drain Current (I_D) at T_A=25Β°C | 30 A | β |
| R_DS(on) Maximum | 2.1 mΞ© | β |
| Gate-Source Voltage (V_GS) Maximum | Β±20 V [DATA_NEEDED: absolute max rated V_GS] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | β |
| Power Dissipation (P_D) at T_C=25Β°C | 375 W | β |
| Power Dissipation (P_D) at T_A=25Β°C | 3.8 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55 Β°C to +175 Β°C |
| Package | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | β |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | β |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | MSL1 (260 Β°C peak reflow) |
| Product Family | β | OptiMOS-T2 |
| Polarity | β | N-Channel |
| Mode | β | Enhancement-mode |
| Drain-Source Voltage (V DS) | β | 40 V |
| Continuous Drain Current (I D, Tc) | β | 50 A |
| Power Dissipation (P D, Tc) | β | 46 W |
| Automotive Qualification | β | AEC-Q101 |
| Avalanche Tested | β | 100 % Avalanche tested |
| Green Package (RoHS) | β | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | β | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | β | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | β | [DATA_NEEDED: Q G typical] |