IPB021N10NM5LF2ATMA1 vs IPT015N10NF2SATMA1 Comparison
Detailed side-by-side comparison of IPB021N10NM5LF2ATMA1 by Infineon and IPT015N10NF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΞ© Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 β ActiveInfineon
IPT015N10NF2SATMA1
IPT015N10NF2SATMA1 - 100V 315A 1.5mΞ© OptiMOS MOSFET | Infineon
IPT015N10NF2SATMA1 β ActiveSpecification Comparison
| Parameter | IPB021N10NM5LF2ATMA1 | IPT015N10NF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.75 | $3.10 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS 5 Linear FET 2 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D) at T_C=25Β°C | 176 A | β |
| Continuous Drain Current (I_D) at T_A=25Β°C | 30 A | β |
| R_DS(on) Maximum | 2.1 mΞ© | β |
| Gate-Source Voltage (V_GS) Maximum | Β±20 V [DATA_NEEDED: absolute max rated V_GS] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | β |
| Power Dissipation (P_D) at T_C=25Β°C | 375 W | β |
| Power Dissipation (P_D) at T_A=25Β°C | 3.8 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55 Β°C to +175 Β°C |
| Package | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | PG-HSOF-8-10 (9-pin, 8+tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | β |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | OptiMOS trench, N-channel enhancement |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Tc) | β | 315 A |
| Continuous Drain Current (ID, Ta) | β | 35 A |
| On-Resistance (RDS(on)) at VGS=10V | β | 1.5 mΞ© |
| Gate-Source Threshold (VGS(th)) | β | 3.8 V at 267 Β΅A |
| Total Power Dissipation (Ta) | β | 3.8 W |
| Total Power Dissipation (Tc) | β | 300 W |
| Gate Drive Voltage (typ) | β | 10 V |
| Single-Pulse Avalanche Energy | β | [DATA_NEEDED: EAS value] |