IPB021N10NM5LF2ATMA1 vs ISK057N04LM6ATLA1 Comparison
Detailed side-by-side comparison of IPB021N10NM5LF2ATMA1 by Infineon and ISK057N04LM6ATLA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΞ© Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 β ActiveInfineon
ISK057N04LM6ATLA1
ISK057N04LM6ATLA1 - 40V 64A OptiMOS 6 N-MOSFET | Infineon
ISK057N04LM6ATLA1 β ActiveSpecification Comparison
| Parameter | IPB021N10NM5LF2ATMA1 | ISK057N04LM6ATLA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.75 | $0.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Linear FET 2 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 100 V | β |
| Continuous Drain Current (I_D) at T_C=25Β°C | 176 A | β |
| Continuous Drain Current (I_D) at T_A=25Β°C | 30 A | β |
| R_DS(on) Maximum | 2.1 mΞ© | β |
| Gate-Source Voltage (V_GS) Maximum | Β±20 V [DATA_NEEDED: absolute max rated V_GS] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | β |
| Power Dissipation (P_D) at T_C=25Β°C | 375 W | β |
| Power Dissipation (P_D) at T_A=25Β°C | 3.8 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55 Β°C to +150 Β°C |
| Package | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | β |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | Trench (OptiMOS 6) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | 1 |
| Series | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Tc | β | 64 A |
| Continuous Drain Current (ID) at Ta | β | [DATA_NEEDED: ID at TA=25C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max at VGS=10V | β | [DATA_NEEDED: RDS(on) max] |
| RDS(on) typical at VGS=10V | β | 5.7 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg total) | β | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Power Dissipation (PD) at Ta=25C | β | 2.1 W |
| Power Dissipation (PD) at Tc=25C | β | 39.1 W |
| Package / Case | β | PG-VSON-6-1 (PQFN 2x2) |
| Packaging | β | Tape & Reel (TR) |
| DigiKey Part Number | β | 448-ISK057N04LM6ATLA1TR-ND |