IPB025N10N3GATMA1 vs IPB021N10NM5LF2ATMA1 Comparison
Detailed side-by-side comparison of IPB025N10N3GATMA1 by Infineon and IPB021N10NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 β ActiveInfineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΞ© Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 β ActiveSpecification Comparison
| Parameter | IPB025N10N3GATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.74 | $2.75 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at Tc | 180 A | β |
| Power Dissipation (PD) at Tc | 300 W | β |
| RDS(on) Typical at VGS=10V, ID=100A | 2.5 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V | β |
| Input Capacitance (Ciss) | 2.58 nF | β |
| Gate Charge (Qg) Typical | [DATA_NEEDED: Qg value] | β |
| Package | PG-TO263-7 (D2PAK-7) 6+Tab | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | -55Β°C to +175Β°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 100 V |
| Continuous Drain Current (I_D) at T_C=25Β°C | β | 176 A |
| Continuous Drain Current (I_D) at T_A=25Β°C | β | 30 A |
| R_DS(on) Maximum | β | 2.1 mΞ© |
| Gate-Source Voltage (V_GS) Maximum | β | Β±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25Β°C | β | 375 W |
| Power Dissipation (P_D) at T_A=25Β°C | β | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | β | 10 V, 15 V |