IPB025N10N3GATMA1 vs IPB027N10N3GATMA1 Comparison
Detailed side-by-side comparison of IPB025N10N3GATMA1 by Infineon and IPB027N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 ✓ ActiveSpecification Comparison
| Parameter | IPB025N10N3GATMA1 | IPB027N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.74 | $1.62 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| RDS(on) Typical at VGS=10V, ID=100A | 2.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V | — |
| Input Capacitance (Ciss) | 2.58 nF | — |
| Gate Charge (Qg) Typical | [DATA_NEEDED: Qg value] | — |
| Package | PG-TO263-7 (D2PAK-7) 6+Tab | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | -55°C to +175°C (TJ) |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 (Trench MOSFET) |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: moisture sensitivity level] |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes | — |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A |
| Power Dissipation (PD) at TC=25°C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mΩ |
| On-Resistance RDS(on) typical at VGS=10V | — | 2.7 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: exact °C/W value] |
| Single Pulse Avalanche Energy (EAS) | — | [DATA_NEEDED: datasheet EAS figure] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg at VGS=10V] |