IPB025N10N3GATMA1 vs IPB039N10N3GATMA1 Comparison

Detailed side-by-side comparison of IPB025N10N3GATMA1 by Infineon and IPB039N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB025N10N3GATMA1 IPB039N10N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.74 $2.28
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at Tc 180 A β€”
Power Dissipation (PD) at Tc 300 W β€”
RDS(on) Typical at VGS=10V, ID=100A 2.5 mΞ© β€”
Gate-Source Threshold Voltage (VGS(th)) 3.5 V β€”
Input Capacitance (Ciss) 2.58 nF β€”
Gate Charge (Qg) Typical [DATA_NEEDED: Qg value] β€”
Package PG-TO263-7 (D2PAK-7) 6+Tab PG-TO263-7 (D2PAK-7, 6 leads + tab)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) -55C to +175C
Technology OptiMOS 3 trench MOSFET MOSFET (Metal Oxide)
MSL Level 1 (unlimited) 1
RoHS Status Compliant β€”
Halogen-Free Yes β€”
Drain-to-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at TC=25C β€” 160 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C β€” 214 W
On-State Resistance RDS(on) at VGS=10V (typ) β€” 3.9 mOhm
Gate-Source Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typ]
Gate-Drain Charge (Qgd) β€” [DATA_NEEDED: Qgd typ]
RoHS / Halogen-Free Status β€” RoHS compliant, halogen-free
Series / Family β€” OptiMOS 3

Datasheets & Resources

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