IPB027N10N3GATMA1 vs IPB025N10N3GATMA1 Comparison

Detailed side-by-side comparison of IPB027N10N3GATMA1 by Infineon and IPB025N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB027N10N3GATMA1 IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΩ | Infineon

IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΩ | Infineon

IPB027N10N3GATMA1 ✓ Active

Specification Comparison

Parameter IPB027N10N3GATMA1 IPB025N10N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $3.74
FET Type N-Channel N-Channel
Technology OptiMOS 3 (Trench MOSFET) OptiMOS 3 trench MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25°C 120 A
Power Dissipation (PD) at TC=25°C 300 W
On-Resistance RDS(on) max at VGS=10V 3.4 mΩ
On-Resistance RDS(on) typical at VGS=10V 2.7 mΩ
Gate-Source Voltage (VGS) max ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical and min/max VGS(th) values]
Operating Temperature Range -55°C to +175°C (TJ) -55C to +175C (junction)
Package PG-TO263-3 (D2PAK) PG-TO263-7 (D2PAK-7) 6+Tab
Mounting Type Surface Mount Surface Mount
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: exact °C/W value]
Single Pulse Avalanche Energy (EAS) [DATA_NEEDED: datasheet EAS figure]
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: moisture sensitivity level] 1 (unlimited)
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg at VGS=10V]
Continuous Drain Current (ID) at Tc 180 A
Power Dissipation (PD) at Tc 300 W
RDS(on) Typical at VGS=10V, ID=100A 2.5 mΩ
Gate-Source Threshold Voltage (VGS(th)) 3.5 V
Input Capacitance (Ciss) 2.58 nF
Gate Charge (Qg) Typical [DATA_NEEDED: Qg value]
Halogen-Free Yes

Datasheets & Resources

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