IPB027N10N3GATMA1 vs IPP147N12N3GXKSA1 Comparison
Detailed side-by-side comparison of IPB027N10N3GATMA1 by Infineon and IPP147N12N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
IPP147N12N3GXKSA1 β ActiveSpecification Comparison
| Parameter | IPB027N10N3GATMA1 | IPP147N12N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $1.62 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 3 (Trench MOSFET) | OptiMOS 3 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 120 A | β |
| Power Dissipation (PD) at TC=25Β°C | 300 W | β |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mΞ© | β |
| On-Resistance RDS(on) typical at VGS=10V | 2.7 mΞ© | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical and min/max VGS(th) values] | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | [DATA_NEEDED: Tj max and operating range] |
| Package | PG-TO263-3 (D2PAK) | PG-TO220-3 (through-hole) |
| Mounting Type | Surface Mount | Through Hole |
| Thermal Resistance Junction-to-Case (RΞΈJC) | [DATA_NEEDED: exact Β°C/W value] | β |
| Single Pulse Avalanche Energy (EAS) | [DATA_NEEDED: datasheet EAS figure] | β |
| RoHS Status | Compliant | Compliant (per distributor listing suffixes XKSA1) |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg at VGS=10V] | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS |
| Transistor Type | β | N-Channel MOSFET |
| Configuration | β | Single with built-in diode |
| Drain-to-Source Voltage (Vdss) | β | 120 V |
| Continuous Drain Current (Id) at Tc=25C | β | 56 A |
| Continuous Drain Current (Id) at Ta | β | 56 A (Ta, per DigiKey listing) |
| Power Dissipation (Pd) at Tc=25C | β | 107 W |
| Number of Pins | β | 3 (3+Tab) |
| Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg value] |
| Rds(on) max | β | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] |
| Vgs(th) (Gate Threshold) | β | [DATA_NEEDED: typical gate threshold voltage] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: typical Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: typical Coss] |
| Reverse Recovery (trr) | β | [DATA_NEEDED: body-diode reverse recovery time] |
| Avalanche Energy Rating | β | Single-pulse avalanche rated |
| Lead-Free | β | Yes |
| Qualification | β | Automotive grade (per datasheet.live listing 'Automotive') |
| Packing Method | β | Tube |