IPB031N08N5ATMA1 vs IPD046N08N5ATMA1 Comparison

Detailed side-by-side comparison of IPB031N08N5ATMA1 by Infineon and IPD046N08N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB031N08N5ATMA1 IPD046N08N5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.62 $0.78
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS™ 5 trench MOSFET
Drain-Source Voltage (VDS) Max 80 V 80 V
Continuous Drain Current (ID) 120 A (Tc)
Power Dissipation (PD) Max 167 W (Tc)
On-Resistance (RDS(on)) Max 3.1 mOhm (VGS=10V)
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS max rating] ±20 V
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) [DATA_NEEDED: Qg total]
Operating Temperature Range -55 C to +175 C
Package PG-TO263-3 (D2PAK)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source + Tab)
Tab Connection Drain (electrically connected to pin)
RoHS Status Compliant ROHS3 Compliant
MSL Level [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Automotive Qualified Yes (per Arrow listing)
Manufacturer Infineon Technologies
Product Series OptiMOS™ 5 80V
Transistor Type N-Channel MOSFET
Continuous Drain Current (ID) at Tc=25°C 90 A
On-Resistance RDS(on) Max at VGS=10V 4.6 mΩ
Power Dissipation (PD) at Tc=25°C 125 W
Operating Junction Temperature Range -55 °C to +175 °C
Package / Case PG-TO252-3 (DPAK), 3-pin (2 leads + tab)
Configuration Single N-channel, 3-pin (Gate / Drain tab / Source)

Datasheets & Resources

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