IPB037N06N3GATMA1 vs IPB60R040CFD7ATMA1 Comparison
Detailed side-by-side comparison of IPB037N06N3GATMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB037N06N3GATMA1 - 60V 90A 3.7mOhm OptiMOS 3 N-MOSFET D2PAK | Infineon
IPB037N06N3GATMA1 β ActiveInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΞ© CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 β ActiveSpecification Comparison
| Parameter | IPB037N06N3GATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.41 | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPB037N06N3GATMA1 | β |
| Technology | OptiMOS 3 (N-channel, enhancement mode) | Superjunction (SJ) N-Channel MOSFET |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 60 V | β |
| Continuous Drain Current (ID) at Tc | 90 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Max | 3.7 mOhm at VGS=10V | β |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | β |
| Total Power Dissipation (Pd) at Tc | 188 W | β |
| Operating Temperature Range | -55 C to +175 C (junction) | -55Β°C to +150Β°C |
| Package / Case | PG-TO263-3 (D2PAK, surface mount) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Gate Charge (Qg) Typ | [DATA_NEEDED: gate charge value] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | 1 |
| Drain Tab Connection | Tab electrically tied to drain | β |
| Product Family | β | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 40 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 4 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25Β°C) | β | 227 W |
| Package | β | PG-TO263-3-2 (D2PAK) |
| Integrated Body Diode | β | Yes - ultra-fast CoolMOS CFD7 diode |
| Lead-Free | β | Yes |
| Target Applications | β | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |