IPB038N12N3GATMA1 vs BSC032N04LSATMA1 Comparison
Detailed side-by-side comparison of IPB038N12N3GATMA1 by Infineon and BSC032N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC032N04LSATMA1
BSC032N04LSATMA1 - 40V 3.2mΞ© OptiMOS 5 N-MOSFET | Infineon
BSC032N04LSATMA1 β ActiveSpecification Comparison
| Parameter | IPB038N12N3GATMA1 | BSC032N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $0.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 120V | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 120 V | β |
| Continuous Drain Current (Id) @ Tc | 120 A | β |
| Power Dissipation (Pd) @ Tc | 300 W | β |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | β |
| Package / Case | PG-TO263-3 (D2PAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | OptiMOS 5 trench |
| Gate Drive | Logic-level compatible | β |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Standard Package Quantity | 1000 (Tape & Reel) | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | β |
| Part Series | β | OptiMOS 5 40V |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Ta=25Β°C | β | 21 A |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 98 A |
| RDS(on) max at VGS=10V | β | 3.2 mΞ© |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 52 W |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Package | β | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Lead-Free | β | Yes |