IPB038N12N3GATMA1 vs IPB027N10N3GATMA1 Comparison
Detailed side-by-side comparison of IPB038N12N3GATMA1 by Infineon and IPB027N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPB038N12N3GATMA1 | IPB027N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.78 | $1.62 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 120V | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (Vdss) | 120 V | β |
| Continuous Drain Current (Id) @ Tc | 120 A | β |
| Power Dissipation (Pd) @ Tc | 300 W | β |
| On-State Resistance (Rds(on)) | 3.8 mOhm (typical) | β |
| Package / Case | PG-TO263-3 (D2PAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | OptiMOS 3 (Trench MOSFET) |
| Gate Drive | Logic-level compatible | β |
| Operating Temperature Range | -55C to +175C (junction) | -55Β°C to +175Β°C (TJ) |
| Standard Package Quantity | 1000 (Tape & Reel) | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | β |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25Β°C | β | 120 A |
| Power Dissipation (PD) at TC=25Β°C | β | 300 W |
| On-Resistance RDS(on) max at VGS=10V | β | 3.4 mΞ© |
| On-Resistance RDS(on) typical at VGS=10V | β | 2.7 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: typical and min/max VGS(th) values] |
| Package | β | PG-TO263-3 (D2PAK) |
| Thermal Resistance Junction-to-Case (RΞΈJC) | β | [DATA_NEEDED: exact Β°C/W value] |
| Single Pulse Avalanche Energy (EAS) | β | [DATA_NEEDED: datasheet EAS figure] |
| MSL Level | β | [DATA_NEEDED: moisture sensitivity level] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg at VGS=10V] |