IPB072N15N3GATMA1 vs BSC123N08NS3GATMA1 Comparison
Detailed side-by-side comparison of IPB072N15N3GATMA1 by Infineon and BSC123N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB072N15N3GATMA1 - 150V 100A N-Ch OptiMOS 3 MOSFET | Infineon
IPB072N15N3GATMA1 β ActiveInfineon
BSC123N08NS3GATMA1
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
BSC123N08NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB072N15N3GATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.84 | $0.71 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 3 (trench MOSFET) | β |
| Drain-Source Voltage (V_DS) | 150 V | β |
| Continuous Drain Current (I_D, Tc=25C) | 100 A | β |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed I_DM] | β |
| Maximum Power Dissipation (P_D, Tc=25C) | 300 W | β |
| R_DS(on) typical at VGS=10V | 7.2 mOhm | β |
| R_DS(on) max at VGS=10V | [DATA_NEEDED: max R_DS(on) at VGS=10V] | β |
| Gate-Source Voltage (V_GS) max | +/-20 V | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | β |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at VGS=10V] | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant with exemption |
| Avalanche Energy Rated | Yes (single-pulse E_AS) | β |
| Intrinsic Body Diode | Yes (low Q_rr, sync-rectifier capable) | β |
| Manufacturer Ordering Code Suffix | GATMA1 (tape and reel, 1000 pcs) | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 3 |
| Channel Type | β | N-Channel |
| Configuration | β | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | β | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | β | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | β | 11 A |
| Maximum Pulsed Drain Current | β | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | β | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc) | β | 66 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Operating Junction Temperature | β | -55C to +150C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | β | Yes (AEC-Q101) |