IPB081N06L3GATMA1 vs IPB020N08N5ATMA1 Comparison
Detailed side-by-side comparison of IPB081N06L3GATMA1 by Infineon and IPB020N08N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB081N06L3GATMA1 - 60V 50A OptiMOS 3 N-Channel MOSFET | Infineon
IPB081N06L3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB081N06L3GATMA1 | IPB020N08N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $1.45 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK-2) |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A | 120 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | 480 A |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 1.2 V min, 2.1 V typ, 2.6 V max | [DATA_NEEDED: VGS(th) value] |
| On-Resistance RDS(on) at VGS=10V | 8.1 mOhm typical | β |
| Maximum Power Dissipation (Pd) at Tc=25C | 79 W | β |
| Operating Temperature Range | -55 C to +175 C (junction) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | β |
| Pin Configuration | Gate / Drain / Source (D2PAK standard) | β |
| Technology | OptiMOS 3 (low-voltage power MOSFET) | OptiMOS 5 (N-channel trench MOSFET) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: MSL level] |
| Maximum RDS(on) at VGS=10V | β | 2.0 mOhm |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at Tc=25C | β | 300 W |
| Operating Junction Temperature | β | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | β | [DATA_NEEDED: RthJC value, approx 0.5 C/W] |
| Avalanche Energy Rated (EAS) | β | [DATA_NEEDED: EAS value] |
| Configuration | β | Single N-channel, 3-pin (2+Tab) |