IPB081N06L3GATMA1 vs IPB021N10NM5LF2ATMA1 Comparison
Detailed side-by-side comparison of IPB081N06L3GATMA1 by Infineon and IPB021N10NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB081N06L3GATMA1 - 60V 50A OptiMOS 3 N-Channel MOSFET | Infineon
IPB081N06L3GATMA1 β ActiveInfineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΞ© Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 β ActiveSpecification Comparison
| Parameter | IPB081N06L3GATMA1 | IPB021N10NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $2.75 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc=25C | 50 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 1.2 V min, 2.1 V typ, 2.6 V max | β |
| On-Resistance RDS(on) at VGS=10V | 8.1 mOhm typical | β |
| Maximum Power Dissipation (Pd) at Tc=25C | 79 W | β |
| Operating Temperature Range | -55 C to +175 C (junction) | -55Β°C to +175Β°C [DATA_NEEDED: confirm from datasheet operating junction range] |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | β |
| Pin Configuration | Gate / Drain / Source (D2PAK standard) | β |
| Technology | OptiMOS 3 (low-voltage power MOSFET) | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] |
| Part Family | β | OptiMOS 5 Linear FET 2 |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 100 V |
| Continuous Drain Current (I_D) at T_C=25Β°C | β | 176 A |
| Continuous Drain Current (I_D) at T_A=25Β°C | β | 30 A |
| R_DS(on) Maximum | β | 2.1 mΞ© |
| Gate-Source Voltage (V_GS) Maximum | β | Β±20 V [DATA_NEEDED: absolute max rated V_GS] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical/min] |
| Power Dissipation (P_D) at T_C=25Β°C | β | 375 W |
| Power Dissipation (P_D) at T_A=25Β°C | β | 3.8 W |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | β | 10 V, 15 V |