IPB081N06L3GATMA1 vs IPD031N03LGATMA1 Comparison
Detailed side-by-side comparison of IPB081N06L3GATMA1 by Infineon and IPD031N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB081N06L3GATMA1 - 60V 50A OptiMOS 3 N-Channel MOSFET | Infineon
IPB081N06L3GATMA1 β ActiveInfineon
IPD031N03LGATMA1 - 30V 90A OptiMOS 3 N-Channel MOSFET | Infineon
IPD031N03LGATMA1 β ActiveSpecification Comparison
| Parameter | IPB081N06L3GATMA1 | IPD031N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Package | PG-TO263-3 (D2PAK) | PG-TO252-3-11 (DPAK-2) |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Tc=25C | 50 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 1.2 V min, 2.1 V typ, 2.6 V max | β |
| On-Resistance RDS(on) at VGS=10V | 8.1 mOhm typical | β |
| Maximum Power Dissipation (Pd) at Tc=25C | 79 W | β |
| Operating Temperature Range | -55 C to +175 C (junction) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | β |
| Pin Configuration | Gate / Drain / Source (D2PAK standard) | β |
| Technology | OptiMOS 3 (low-voltage power MOSFET) | MOSFET (Metal Oxide), OptiMOS 3 |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | 1 |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ 25 Β°C | β | 90 A (Tc) |
| Power Dissipation (Pd) | β | 94 W (Tc) |
| RDS(on) Max @ VGS=10V | β | 3.1 mΞ© |
| RDS(on) Max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) @ 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical/max] |
| Drive Voltage (Max RDS(on), Min RDS(on)) | β | 4.5 V, 10 V |
| Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical @ 10V Vgs] |
| Output Charge (Qoss) | β | Ultra low (per datasheet tagline) |
| Operating Temperature | β | -55 Β°C to +175 Β°C (junction) |
| Mounting Tab | β | Drain (electrically connected) |
| Avalanche Energy Rated | β | Yes (per OptiMOS 3 datasheet family) |