IPB081N06L3GATMA1 vs IPD50N06S409ATMA2 Comparison
Detailed side-by-side comparison of IPB081N06L3GATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB081N06L3GATMA1 - 60V 50A OptiMOS 3 N-Channel MOSFET | Infineon
IPB081N06L3GATMA1 β ActiveInfineon
IPD50N06S409ATMA2 - 60V 50A 9mΞ© OptiMOS N-Ch MOSFET | Infineon
IPD50N06S409ATMA2 β ActiveSpecification Comparison
| Parameter | IPB081N06L3GATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Package | PG-TO263-3 (D2PAK) | PG-TO252-3-11 (DPAK) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 50 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 1.2 V min, 2.1 V typ, 2.6 V max | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) at VGS=10V | 8.1 mOhm typical | β |
| Maximum Power Dissipation (Pd) at Tc=25C | 79 W | β |
| Operating Temperature Range | -55 C to +175 C (junction) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | β |
| Pin Configuration | Gate / Drain / Source (D2PAK standard) | β |
| Technology | OptiMOS 3 (low-voltage power MOSFET) | N-Channel MOSFET (OptiMOS) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (unlimited) | β |
| Continuous Drain Current (ID) at Tc | β | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | β | 9 mΞ© |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | β | 71 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Pin Count | β | 3 (2 + Tab) |
| Automotive Qualification | β | AEC-Q101 |
| Lead-Free / Halogen-Free | β | [DATA_NEEDED] |