IPB100N04S4H2ATMA1 vs IAUC100N04S6N022ATMA1 Comparison
Detailed side-by-side comparison of IPB100N04S4H2ATMA1 by Infineon and IAUC100N04S6N022ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 β ActiveInfineon
IAUC100N04S6N022ATMA1
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 β ActiveSpecification Comparison
| Parameter | IPB100N04S4H2ATMA1 | IAUC100N04S6N022ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $0.82 |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | OptiMOS-T2 (trench gate) | OptiMOS 6, N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| RDS(on) at VGS=10V | 2.4 mΞ© typical | β |
| Maximum Power Dissition (PD) at TC=25C | 115 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Storage Temperature | [DATA_NEEDED: storage temp range] | β |
| Package | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TDSON-8 (5x6 mm) leadless |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260C peak reflow) | 1 (per JEDEC J-STD-020) |
| Avalanche Energy (EAS) | 100% avalanche tested | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q100 (IAUC family) |
| RoHS Compliance | Compliant (Green Product) | β |
| Drain-Source Voltage (V_DSS) | β | 40 V |
| Continuous Drain Current (I_D, Tc) | β | 100 A |
| Power Dissipation (P_D, Tc) | β | 75 W |
| R_DS(on) (typ at V_GS=10V) | β | 2.2 mOhm |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Polarity | β | N-Channel enhancement mode |
| Pin Count | β | 8 |
| Gate Threshold V_GS(th) | β | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Q_g | β | [DATA_NEEDED: total gate charge] |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |