IPB100N04S4H2ATMA1 vs IPC100N04S5L1R5ATMA1 Comparison
Detailed side-by-side comparison of IPB100N04S4H2ATMA1 by Infineon and IPC100N04S5L1R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 β ActiveInfineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveSpecification Comparison
| Parameter | IPB100N04S4H2ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $1.18 |
| FET Type | N-Channel, Enhancement Mode | β |
| Technology | OptiMOS-T2 (trench gate) | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typ] |
| RDS(on) at VGS=10V | 2.4 mΞ© typical | β |
| Maximum Power Dissition (PD) at TC=25C | 115 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Storage Temperature | [DATA_NEEDED: storage temp range] | β |
| Package | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260C peak reflow) | MSL1 (260C peak reflow) |
| Avalanche Energy (EAS) | 100% avalanche tested | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Compliance | Compliant (Green Product) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS-5 40 V |
| Polarity / Channel Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | 20 V |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Power Dissipation (PD) at Tc=25C | β | 115 W |
| On-Resistance RDS(on) at VGS=10 V | β | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | β | 1.8 mOhm (typ) |
| Operating Temperature Range | β | -55C to +175C |
| AEC-Q101 Qualified | β | Yes |
| RoHS Status | β | Compliant (Green Product) |
| Avalanche Tested | β | 100% |