IPB100N04S4H2ATMA1 vs IPC70N04S5L4R2ATMA1 Comparison
Detailed side-by-side comparison of IPB100N04S4H2ATMA1 by Infineon and IPC70N04S5L4R2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 β ActiveInfineon
IPC70N04S5L4R2ATMA1
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 β ActiveSpecification Comparison
| Parameter | IPB100N04S4H2ATMA1 | IPC70N04S5L4R2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.42 | $0.78 |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Technology | OptiMOS-T2 (trench gate) | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| RDS(on) at VGS=10V | 2.4 mΞ© typical | β |
| Maximum Power Dissition (PD) at TC=25C | 115 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Storage Temperature | [DATA_NEEDED: storage temp range] | β |
| Package | PG-TO263-3-2 (D2PAK-2) Surface Mount | PG-TDSON-8-34 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (up to 260C peak reflow) | MSL1 (up to 260Β°C peak reflow) |
| Avalanche Energy (EAS) | 100% avalanche tested | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant (Green Product) | β |
| Drain to Source Voltage (Vdss) | β | 40 V |
| Continuous Drain Current (Id) @ Tc=25Β°C | β | 70 A |
| Power Dissipation (Pd) @ Tc=25Β°C | β | 50 W |
| R_DS(on) Max @ Vgs=10V | β | 4.2 mΞ© (typ) |
| Gate Threshold (Vgs(th)) | β | Logic Level (4.5 V max Rds On, Min Rds On) |
| Drive Voltage (Max Rds On, Min Rds On) | β | 4.5 V |
| Operating Temperature (Tj) | β | -55Β°C to +175Β°C |
| Avalanche Tested | β | 100% (60 A production test) |
| RoHS Status | β | Compliant (Green Product) |
| Configuration | β | Single with Built-in Diode |
| Case Connection | β | DRAIN |