IPB107N20N3GATMA1 vs BSC123N08NS3GATMA1 Comparison
Detailed side-by-side comparison of IPB107N20N3GATMA1 by Infineon and BSC123N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 β ActiveInfineon
BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon
BSC123N08NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB107N20N3GATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $0.71 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at Tc | 88 A | β |
| Maximum Power Dissipation (Pd) at Tc | 300 W | β |
| On-Resistance RDS(on) at VGS=10V | 9.6 milliohm (typical, per third-party listing) | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | [DATA_NEEDED: VGS(th) value] |
| Operating Temperature Range | [DATA_NEEDED: Tj max and operating range] | β |
| Package | PG-TO263-3 (D2PAK) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Drain, Source, Gate) + Tab | β |
| RoHS Status | Compliant | Compliant with exemption |
| Technology | OptiMOS 3 trench MOSFET | β |
| Part Family | β | OptiMOS 3 |
| Channel Type | β | N-Channel |
| Configuration | β | Single with built-in body diode |
| Maximum Drain-Source Voltage (VDS) | β | 80 V |
| Maximum Continuous Drain Current (ID, Tc) | β | 55 A |
| Maximum Continuous Drain Current (ID, Ta) | β | 11 A |
| Maximum Pulsed Drain Current | β | [DATA_NEEDED: pulsed drain current] |
| Maximum RDS(on) @ VGS=10 V | β | 12.3 mOhm |
| Maximum Gate-Source Voltage (VGS) | β | Β±20 V |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc) | β | 66 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Operating Junction Temperature | β | -55C to +150C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Automotive Qualified | β | Yes (AEC-Q101) |