IPB107N20N3GATMA1 vs IPB025N10N3GATMA1 Comparison
Detailed side-by-side comparison of IPB107N20N3GATMA1 by Infineon and IPB025N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 β ActiveInfineon
IPB025N10N3GATMA1 - 100V 180A OptiMOS 3 N-Channel MOSFET | Infineon
IPB025N10N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB107N20N3GATMA1 | IPB025N10N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $3.74 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 200 V | 100 V |
| Continuous Drain Current (ID) at Tc | 88 A | 180 A |
| Maximum Power Dissipation (Pd) at Tc | 300 W | β |
| On-Resistance RDS(on) at VGS=10V | 9.6 milliohm (typical, per third-party listing) | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | β |
| Operating Temperature Range | [DATA_NEEDED: Tj max and operating range] | -55C to +175C (junction) |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-7 (D2PAK-7) 6+Tab |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Drain, Source, Gate) + Tab | β |
| RoHS Status | Compliant | Compliant |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 trench MOSFET |
| FET Type | β | N-Channel |
| Power Dissipation (PD) at Tc | β | 300 W |
| RDS(on) Typical at VGS=10V, ID=100A | β | 2.5 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | 3.5 V |
| Input Capacitance (Ciss) | β | 2.58 nF |
| Gate Charge (Qg) Typical | β | [DATA_NEEDED: Qg value] |
| MSL Level | β | 1 (unlimited) |
| Halogen-Free | β | Yes |