IPB107N20N3GATMA1 vs IPB072N15N3GATMA1 Comparison
Detailed side-by-side comparison of IPB107N20N3GATMA1 by Infineon and IPB072N15N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB107N20N3GATMA1 - 200V 88A OptiMOS 3 N-Channel MOSFET | Infineon
IPB107N20N3GATMA1 β ActiveInfineon
IPB072N15N3GATMA1 - 150V 100A N-Ch OptiMOS 3 MOSFET | Infineon
IPB072N15N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB107N20N3GATMA1 | IPB072N15N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $2.84 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 3 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at Tc | 88 A | β |
| Maximum Power Dissipation (Pd) at Tc | 300 W | β |
| On-Resistance RDS(on) at VGS=10V | 9.6 milliohm (typical, per third-party listing) | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | β |
| Operating Temperature Range | [DATA_NEEDED: Tj max and operating range] | -55 C to +175 C |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Drain, Source, Gate) + Tab | β |
| RoHS Status | Compliant | Compliant |
| Technology | OptiMOS 3 trench MOSFET | OptiMOS 3 (trench MOSFET) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 150 V |
| Continuous Drain Current (I_D, Tc=25C) | β | 100 A |
| Continuous Drain Current (I_D, Tc=100C) | β | [DATA_NEEDED: I_D at Tc=100C] |
| Pulsed Drain Current (I_DM) | β | [DATA_NEEDED: pulsed I_DM] |
| Maximum Power Dissipation (P_D, Tc=25C) | β | 300 W |
| R_DS(on) typical at VGS=10V | β | 7.2 mOhm |
| R_DS(on) max at VGS=10V | β | [DATA_NEEDED: max R_DS(on) at VGS=10V] |
| Gate-Source Voltage (V_GS) max | β | +/-20 V |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical] |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: Q_g typical at VGS=10V] |
| Avalanche Energy Rated | β | Yes (single-pulse E_AS) |
| Intrinsic Body Diode | β | Yes (low Q_rr, sync-rectifier capable) |
| Manufacturer Ordering Code Suffix | β | GATMA1 (tape and reel, 1000 pcs) |