IPB110P06LMATMA1 vs IGI65D1414A3MSXUMA1 Comparison
Detailed side-by-side comparison of IPB110P06LMATMA1 by Infineon and IGI65D1414A3MSXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΞ© QFN-32 | Infineon
IGI65D1414A3MSXUMA1 β ActiveSpecification Comparison
| Parameter | IPB110P06LMATMA1 | IGI65D1414A3MSXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.31 | $4.95 |
| FET Type | P-Channel | β |
| Technology | OptiMOS (trench MOSFET) | Enhancement-mode GaN HEMT (eMode) |
| Drain-Source Voltage (VDS) | -60 V | β |
| Continuous Drain Current (ID) at TC=25C | -100 A | β |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | β |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | β |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | β |
| Gate-Source Voltage (VGS max) | +/-20 V | β |
| Operating Temperature Range | -55 C to +175 C (TJ) | [DATA_NEEDED: operating temperature range] |
| Package / Case | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | β |
| Gate Drive Level | Logic-level compatible | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | CoolGaNβ’ HEMT |
| Configuration | β | Half-Bridge (2 FETs in QFN-32, high-side + low-side) |
| Drain-Source Voltage (V_DS, max) | β | 650 V |
| On-Resistance (R_DS(on), typ) | β | 140 mΞ© per FET |
| Continuous Drain Current | β | 13.7 A (per Newark listing) |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) value] |
| Package | β | PG-TIQFN-32-1 (QFN-32, 6x8 mm) |
| Total Gate Charge (Q_G, typ) | β | [DATA_NEEDED: Q_G total] |
| Output Charge (Q_OSS) | β | [DATA_NEEDED: Q_OSS value] |
| Reverse Recovery Charge (Q_RR) | β | 0 nC (intrinsic to GaN HEMT, no body diode recovery) |
| Thermal Resistance (R_thJA) | β | [DATA_NEEDED: R_thJA value] |
| Typical Applications | β | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| RoHS Compliance | β | Compliant |