IPB110P06LMATMA1 vs IPD038N06N3GATMA1 Comparison
Detailed side-by-side comparison of IPB110P06LMATMA1 by Infineon and IPD038N06N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD038N06N3GATMA1 - 60V 90A OptiMOS N-Channel MOSFET | Infineon
IPD038N06N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB110P06LMATMA1 | IPD038N06N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.31 | $0.65 |
| FET Type | P-Channel | N-Channel MOSFET |
| Technology | OptiMOS (trench MOSFET) | OptiMOS trench MOSFET |
| Drain-Source Voltage (VDS) | -60 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | -100 A | β |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | β |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | β |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | β |
| Gate-Source Voltage (VGS max) | +/-20 V | β |
| Operating Temperature Range | -55 C to +175 C (TJ) | [DATA_NEEDED: operating temperature range] |
| Package / Case | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | β |
| Gate Drive Level | Logic-level compatible | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Series | β | OptiMOS 60V |
| Continuous Drain Current (ID) at Tc | β | 90 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (typ) |
| On-Resistance (RDS(on)) at VGS=10V | β | 3.8 mΞ© |
| Total Power Dissipation (PD) at Tc | β | 188 W |
| Package | β | PG-TO252-3 (DPAK) |
| MSL Level | β | 1 |
| Halogen-Free | β | Yes |
| Polarity | β | N-Channel |