IPB120N04S402ATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPB120N04S402ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB120N04S402ATMA1 - 40V 120A OptiMOS-T2 N-FET D2PAK | Infineon
IPB120N04S402ATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IPB120N04S402ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | β |
| FET Type | N-Channel, Enhancement Mode | 2x N-Channel MOSFET array |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, TC) | 120 A | β |
| Power Dissipation (PD, TC) | 158 W | β |
| RDS(on) (typ @ VGS=10 V) | 1.8 mΞ© | β |
| Package | PG-TO263-3 (D2PAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (2 + Tab) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: gate threshold voltage] | β |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: total gate charge] | β |
| Avalanche Energy Rating | 100% Avalanche Tested | β |
| Moisture Sensitivity Level (MSL) | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Compliance | Green Product (RoHS compliant) | β |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Technology | β | Trench MOSFET (OptiMOS 3) |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |