IPB35N10S3L26ATMA1 vs IPD50N04S408ATMA1 Comparison
Detailed side-by-side comparison of IPB35N10S3L26ATMA1 by Infineon and IPD50N04S408ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 β Active
Specification Comparison
| Parameter | IPB35N10S3L26ATMA1 | IPD50N04S408ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $0.69 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | OptiMOS-T2 |
| Channel Type | N-Channel | β |
| Maximum Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC | 35 A | β |
| Power Dissipation (PD) at TC | 71 W | β |
| Package Type | PG-TO263-3 (D2PAK-2) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Channel Mode | Enhancement | β |
| RDS(on) (typical per Infineon product page) | 26.3 mΞ© | β |
| Typical Gate Charge Qg @ Vgs | 80 nC | β |
| Maximum Drain-Source Resistance Rds | 1.7 mΞ© (per RS Components listing) | β |
| Minimum Operating Temperature | -55 C | β |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | β |
| RoHS Status | [DATA_NEEDED: RoHS status] | β |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | β |
| Polarity | β | N-Channel |
| Mode | β | Enhancement-mode |
| Drain-Source Voltage (V DS) | β | 40 V |
| Continuous Drain Current (I D, Tc) | β | 50 A |
| Power Dissipation (P D, Tc) | β | 46 W |
| Package | β | PG-TO252-3-313 (DPAK) |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| MSL Level | β | MSL1 (260 Β°C peak reflow) |
| Automotive Qualification | β | AEC-Q101 |
| Avalanche Tested | β | 100 % Avalanche tested |
| Green Package (RoHS) | β | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | β | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | β | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | β | [DATA_NEEDED: Q G typical] |