IPB35N10S3L26ATMA1 vs IPG20N10S4L22AATMA1 Comparison
Detailed side-by-side comparison of IPB35N10S3L26ATMA1 by Infineon and IPG20N10S4L22AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 β ActiveInfineon
IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΞ© MOSFET | Infineon
IPG20N10S4L22AATMA1 β ActiveSpecification Comparison
| Parameter | IPB35N10S3L26ATMA1 | IPG20N10S4L22AATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $1.45 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS-T | β |
| Channel Type | N-Channel | β |
| Maximum Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC | 35 A | β |
| Power Dissipation (PD) at TC | 71 W | β |
| Package Type | PG-TO263-3 (D2PAK-2) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| Channel Mode | Enhancement | β |
| RDS(on) (typical per Infineon product page) | 26.3 mΞ© | β |
| Typical Gate Charge Qg @ Vgs | 80 nC | β |
| Maximum Drain-Source Resistance Rds | 1.7 mΞ© (per RS Components listing) | β |
| Minimum Operating Temperature | -55 C | β |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | β |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | β |
| FET Type | β | Dual N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 100 V |
| Continuous Drain Current (I<sub>D</sub>) | β | 20 A |
| On-State Resistance (R<sub>DS(on)</sub>) | β | 22 mΞ© (typical) |
| Power Dissipation (P<sub>D</sub>) | β | 60 W |
| Gate-Source Voltage (V<sub>GS</sub>) | β | Β±20 V |
| Gate Threshold (V<sub>GS(th)</sub>) | β | [DATA_NEEDED: Vgs(th)] |
| Package | β | PG-TDSON-8-10 (Wettable Flank) |
| Lead Configuration | β | Wettable Flank |
| Automotive Qualification | β | AEC-Q101 |
| Technology | β | OptiMOS T2 |
| Operating Temperature | β | -55Β°C to +175Β°C |
| Channel Count | β | 2 (dual independent) |