IPB35N10S3L26ATMA2 vs IPB35N10S3L26ATMA1 Comparison
Detailed side-by-side comparison of IPB35N10S3L26ATMA2 by Infineon and IPB35N10S3L26ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 β ActiveSpecification Comparison
| Parameter | IPB35N10S3L26ATMA2 | IPB35N10S3L26ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $1.15 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS Power-Transistor | OptiMOS-T |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (Vds) | 100 V | β |
| Continuous Drain Current (Id) at Tc | 35 A | β |
| Pulsed Drain Current | 180 A | β |
| Power Dissipation (Pd) at Tc | 71 W | β |
| RDS(on) (typical) | 26.3 mOhm | β |
| Package | PG-TO263-3-2 (D2PAK) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | β |
| Number of Pins | 3 | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | β |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Automotive Qualified | Yes (per Infineon product page classification) | β |
| Channel Type | β | N-Channel |
| Maximum Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC | β | 35 A |
| Power Dissipation (PD) at TC | β | 71 W |
| Package Type | β | PG-TO263-3 (D2PAK-2) |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Channel Mode | β | Enhancement |
| RDS(on) (typical per Infineon product page) | β | 26.3 mΞ© |
| Typical Gate Charge Qg @ Vgs | β | 80 nC |
| Maximum Drain-Source Resistance Rds | β | 1.7 mΞ© (per RS Components listing) |
| Minimum Operating Temperature | β | -55 C |
| Maximum Power Dissipation Pd | β | 81 W (per RS Components listing) |
| AEC-Q101 Qualification | β | [DATA_NEEDED: AEC-Q101 qualification status] |