IPB35N10S3L26ATMA2 vs IPD50N04S408ATMA1 Comparison
Detailed side-by-side comparison of IPB35N10S3L26ATMA2 by Infineon and IPD50N04S408ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPB35N10S3L26ATMA2 | IPD50N04S408ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.69 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS Power-Transistor | OptiMOS-T2 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (Vds) | 100 V | β |
| Continuous Drain Current (Id) at Tc | 35 A | β |
| Pulsed Drain Current | 180 A | β |
| Power Dissipation (Pd) at Tc | 71 W | β |
| RDS(on) (typical) | 26.3 mOhm | β |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO252-3-313 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | -55 Β°C to +175 Β°C |
| Number of Pins | 3 | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | β |
| RoHS Status | Compliant | β |
| Automotive Qualified | Yes (per Infineon product page classification) | β |
| Polarity | β | N-Channel |
| Mode | β | Enhancement-mode |
| Drain-Source Voltage (V DS) | β | 40 V |
| Continuous Drain Current (I D, Tc) | β | 50 A |
| Power Dissipation (P D, Tc) | β | 46 W |
| MSL Level | β | MSL1 (260 Β°C peak reflow) |
| Automotive Qualification | β | AEC-Q101 |
| Avalanche Tested | β | 100 % Avalanche tested |
| Green Package (RoHS) | β | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | β | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | β | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | β | [DATA_NEEDED: Q G typical] |