IPB35N10S3L26ATMA2 vs IQE013N04LM6ATMA1 Comparison
Detailed side-by-side comparison of IPB35N10S3L26ATMA2 by Infineon and IQE013N04LM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveSpecification Comparison
| Parameter | IPB35N10S3L26ATMA2 | IQE013N04LM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.71 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS Power-Transistor | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (Vds) | 100 V | β |
| Continuous Drain Current (Id) at Tc | 35 A | β |
| Pulsed Drain Current | 180 A | β |
| Power Dissipation (Pd) at Tc | 71 W | β |
| RDS(on) (typical) | 26.3 mOhm | β |
| Package | PG-TO263-3-2 (D2PAK) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | -55 Β°C to +175 Β°C |
| Number of Pins | 3 | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | β |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified | Yes (per Infineon product page classification) | β |
| Technology | β | OptiMOS N-channel trench MOSFET |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (Ta) | β | 31 A |
| Continuous Drain Current (Tc) | β | 205 A |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 107 W |
| On-Resistance RDS(on) max | β | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | β | 1.35 mΞ© @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (typ) |
| Source-Down Topology | β | Yes (flip-chip die attach, drain on top thermal pad) |