IPB60R040CFD7ATMA1 vs IPB014N06NATMA1 Comparison
Detailed side-by-side comparison of IPB60R040CFD7ATMA1 by Infineon and IPB014N06NATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΞ© CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 β ActiveInfineon
IPB014N06NATMA1 - 60V 180A OptiMOS 5 N-Channel MOSFET | Infineon
IPB014N06NATMA1 β ActiveSpecification Comparison
| Parameter | IPB60R040CFD7ATMA1 | IPB014N06NATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.19 | $2.10 |
| Manufacturer | Infineon Technologies | β |
| Product Family | CoolMOS CFD7 | β |
| Technology | Superjunction (SJ) N-Channel MOSFET | OptiMOS 5 (trench-gate) |
| Drain-Source Voltage (VDS) | 600 V | 60 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 50 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 4 V | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | β |
| Power Dissipation (Tc=25Β°C) | 227 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | β |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-7 (D2PAK-7) |
| Mounting Type | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | β |
| MSL Level | 1 | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | β |
| Transistor Polarity | β | N-Channel |
| Continuous Drain Current (ID) at Ta | β | 34 A |
| Continuous Drain Current (ID) at Tc | β | 180 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 214 W |
| On-Resistance RDS(on) max | β | 1.4 mΞ© at VGS=10V |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Avalanche Rating | β | 100% avalanche tested |
| Qualification | β | JEDEC qualified for target applications |
| Primary Application | β | Synchronous rectification, motor control |