IPB60R040CFD7ATMA1 vs IPB039N10N3GATMA1 Comparison

Detailed side-by-side comparison of IPB60R040CFD7ATMA1 by Infineon and IPB039N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB60R040CFD7ATMA1 IPB039N10N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.19 $2.28
Manufacturer Infineon Technologies β€”
Product Family CoolMOS CFD7 β€”
Technology Superjunction (SJ) N-Channel MOSFET MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 600 V β€”
Continuous Drain Current (ID, Tc=25Β°C) 50 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 40 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 4 V β€”
Total Gate Charge Qg typ [DATA_NEEDED: Qg] β€”
Power Dissipation (Tc=25Β°C) 227 W β€”
Operating Temperature Range -55Β°C to +150Β°C -55C to +175C
Package PG-TO263-3-2 (D2PAK) PG-TO263-7 (D2PAK-7, 6 leads + tab)
Mounting Type Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode β€”
MSL Level 1 1
RoHS Status Compliant β€”
Lead-Free Yes β€”
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) β€”
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at TC=25C β€” 160 A
Power Dissipation (PD) at TC=25C β€” 214 W
On-State Resistance RDS(on) at VGS=10V (typ) β€” 3.9 mOhm
Gate-Source Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typ]
Gate-Drain Charge (Qgd) β€” [DATA_NEEDED: Qgd typ]
RoHS / Halogen-Free Status β€” RoHS compliant, halogen-free
Series / Family β€” OptiMOS 3

Datasheets & Resources

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