IPB60R040CFD7ATMA1 vs IPD50R399CPATMA1 Comparison

Detailed side-by-side comparison of IPB60R040CFD7ATMA1 by Infineon and IPD50R399CPATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD50R399CPATMA1 IPD50R399CPATMA1 - 500V N-Ch CoolMOS CP, 9A DPAK | Infineon

IPD50R399CPATMA1 - 500V N-Ch CoolMOS CP, 9A DPAK | Infineon

IPD50R399CPATMA1 βœ“ Active

Specification Comparison

Parameter IPB60R040CFD7ATMA1 IPD50R399CPATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.19 $0.89
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CFD7 CoolMOS CP
Technology Superjunction (SJ) N-Channel MOSFET CoolMOS CP (superjunction)
Drain-Source Voltage (VDS) 600 V β€”
Continuous Drain Current (ID, Tc=25Β°C) 50 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) max @ VGS=10V 40 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 4 V β€”
Total Gate Charge Qg typ [DATA_NEEDED: Qg] β€”
Power Dissipation (Tc=25Β°C) 227 W β€”
Operating Temperature Range -55Β°C to +150Β°C β€”
Package PG-TO263-3-2 (D2PAK) PG-TO252-3-313 (DPAK)
Mounting Type Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode β€”
MSL Level 1 β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) β€”
Channel Type β€” N-Channel
Drain-Source Voltage (V_DS) β€” 500 V
Continuous Drain Current (I_D, Tc) β€” 9 A
Power Dissipation (P_D, Tc) β€” 83 W
On-Resistance (R_DS(on), typ) β€” 0.399 ohm
Pin Count β€” 3 (Gate, Drain, Source)
Lead Free / RoHS β€” ROHS3 Compliant
Configuration β€” Single
Operating Mode β€” Enhancement-mode
Datasheet Series β€” IPD50R399CP

Datasheets & Resources

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