IPB60R040CFD7ATMA1 vs IPD60R600PFD7SAUMA1 Comparison
Detailed side-by-side comparison of IPB60R040CFD7ATMA1 by Infineon and IPD60R600PFD7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΞ© CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 β ActiveInfineon
IPD60R600PFD7SAUMA1 - 600V 6A 600mΞ© CoolMOS PFD7 MOSFET | Infineon
IPD60R600PFD7SAUMA1 β ActiveSpecification Comparison
| Parameter | IPB60R040CFD7ATMA1 | IPD60R600PFD7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.19 | $0.45 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS CFD7 | β |
| Technology | Superjunction (SJ) N-Channel MOSFET | Superjunction (CoolMOS) |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 50 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max @ VGS=10V | 40 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 4 V | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | β |
| Power Dissipation (Tc=25Β°C) | 227 W | β |
| Operating Temperature Range | -55Β°C to +150Β°C | β |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Integrated Body Diode | Yes - ultra-fast CoolMOS CFD7 diode | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Target Applications | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) | β |
| Series | β | CoolMOS PFD7 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 600 V |
| Continuous Drain Current (I_D) | β | 6 A (Tc) |
| R_DS(on) Max | β | 600 mΞ© @ V_GS = 10 V, I_D = 1.7 A |
| Total Gate Charge (Q_g) | β | 8.5 nC |
| Output Capacitance (C_oss) | β | 8 pF @ 400 V |
| Power Dissipation (P_D) | β | 31 W (Tc) |
| Gate Threshold Voltage (V_GS(th)) | β | 3.5 V (typ) |
| Operating Temperature | β | -55Β°C to +150Β°C (Tj) |
| Reel Quantity | β | 2500 |