IPB60R040CFD7ATMA1 vs IPD80R280P7ATMA1 Comparison

Detailed side-by-side comparison of IPB60R040CFD7ATMA1 by Infineon and IPD80R280P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD80R280P7ATMA1 IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 - 800V 280mOhm CoolMOS P7 MOSFET | Infineon

IPD80R280P7ATMA1 βœ“ Active

Specification Comparison

Parameter IPB60R040CFD7ATMA1 IPD80R280P7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.19 $1.62
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS CFD7 CoolMOS P7
Technology Superjunction (SJ) N-Channel MOSFET Superjunction (CoolMOS P7)
Drain-Source Voltage (VDS) 600 V β€”
Continuous Drain Current (ID, Tc=25Β°C) 50 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
On-Resistance RDS(on) max @ VGS=10V 40 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 4 V β€”
Total Gate Charge Qg typ [DATA_NEEDED: Qg] β€”
Power Dissipation (Tc=25Β°C) 227 W β€”
Operating Temperature Range -55Β°C to +150Β°C β€”
Package PG-TO263-3-2 (D2PAK) PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
Integrated Body Diode Yes - ultra-fast CoolMOS CFD7 diode β€”
MSL Level 1 [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Target Applications Soft-switching topologies (ZVS phase-shift full-bridge, LLC) β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (V_DS) β€” 800 V
Continuous Drain Current (I_D, Tc) β€” 17 A
R_DS(on) max at V_GS=10V β€” 280 mOhm
Power Dissipation (P_D, Tc) β€” 101 W
Gate-Source Voltage (V_GS) max β€” [DATA_NEEDED: V_GS max rating]
Operating Junction Temperature β€” -55C to +150C
ESD Protection β€” Integrated (per datasheet)

Datasheets & Resources

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