IPB60R165CPATMA1 vs IPD60R145CFD7ATMA1 Comparison

Detailed side-by-side comparison of IPB60R165CPATMA1 by Infineon and IPD60R145CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB60R165CPATMA1 IPD60R145CFD7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.78 $1.05
Technology CoolMOS CP (superjunction, N-Channel) CoolMOS CFD7 (superjunction)
Drain-Source Voltage (VDS) 600 V β€”
Continuous Drain Current (ID, Tc=25Β°C) 21 A β€”
Power Dissipation (PD, Tc=25Β°C) 192 W β€”
On-Resistance RDS(on), max (VGS=10V) 165 mΞ© β€”
Gate-Source Voltage (VGS) Β±20 V β€”
Gate Threshold Voltage (VGS(th), typ) 3.5 V β€”
Total Gate Charge (Qg, typ) [DATA_NEEDED: Qg typical value] β€”
Operating Temperature Range (TJ) -55Β°C to +150Β°C β€”
Package PG-TO263-3-2 (D2PAK-2) TO-252AA (DPAK) surface mount
Mounting Type Surface Mount Surface Mount (DPAK, 3-pin + tab)
RoHS Status Compliant (Pb-free lead plating) Compliant
JEDEC Qualification Qualified per JEDEC for target applications β€”
dv/dt Ruggedness Extreme dv/dt rated β€”
Polarity / Channel N-Channel β€”
FET Type β€” N-Channel
Drain-Source Voltage (V<sub>DS</sub>) β€” 600 V
Continuous Drain Current (I<sub>D</sub>) β€” 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max β€” 145 mOhm
Power Dissipation (P<sub>D</sub>) β€” 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> β€” [DATA_NEEDED: Vth typical/min/max]
Body Diode β€” Integrated fast body diode (low Q<sub>rr</sub>)
Operating Temperature β€” -55C to +150C (junction)
Pin Count β€” 3 (Gate, Drain, Source)
Series β€” CoolMOS CFD7
MSL Level β€” [DATA_NEEDED: MSL rating]
Target Application β€” ZVS / LLC resonant converters, soft switching

Datasheets & Resources

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