IPB60R190C6ATMA1 vs IPA60R190C6XKSA1 Comparison
Detailed side-by-side comparison of IPB60R190C6ATMA1 by Infineon and IPA60R190C6XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPB60R190C6ATMA1 | IPA60R190C6XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.45 | $1.18 |
| Technology | CoolMOS C6 Superjunction N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | β |
| Power Dissipation (PD) at Tc=25C | 151 W | β |
| On-Resistance RDS(on) max at VGS=10V | 190 mOhm | β |
| Gate-Source Voltage (VGS) max | +/-20 V | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typ) | 3.5 V |
| Total Gate Charge (Qg) typ | 32 nC | β |
| Operating Temperature Range | -55C to +150C | -55C to +150C |
| Package | PG-TO263-3 (D2PAK) | PG-TO220-FP (TO-220 FullPAK, 3+tab) |
| Mounting Type | Surface Mount | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) | β |
| MSL Level | 1 | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy Rated | Yes (EAS per datasheet) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | CoolMOS C6 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc=25C) | β | 20.2 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25C) | β | 34 W |
| On-State Resistance (RDS(on)) | β | 190 mOhm at VGS=10V, ID=9.5A |
| Gate Charge (Qg, typ) | β | [DATA_NEEDED: Qg typ] |
| Tab Isolation | β | Fully isolated (4 kV) |
| Lead Free | β | Yes |