IPB60R280P7ATMA1 vs IPB60R190C6ATMA1 Comparison
Detailed side-by-side comparison of IPB60R280P7ATMA1 by Infineon and IPB60R190C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPB60R280P7ATMA1 | IPB60R190C6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $1.45 |
| Manufacturer | Infineon Technologies | β |
| Product Family | CoolMOS P7 (600 V) | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | Superjunction (SJ) | CoolMOS C6 Superjunction N-Channel MOSFET |
| Drain-Source Voltage (V_DSS) | 600 V | β |
| Continuous Drain Current (I_D, T_C=25Β°C) | 12 A | β |
| On-Resistance R_DS(on) max (V_GS=10V) | 280 mOhm | β |
| Gate-Source Threshold V_GS(th) typ | 3.5 V | β |
| Power Dissipation P_D (T_C=25Β°C) | 53 W | β |
| Package | PG-TO263-3 (D2PAK) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 (2 + Tab) | 3 (Gate, Drain, Source) |
| Operating Temperature Range | -55 Β°C to +150 Β°C (T_j max) | -55C to +150C |
| Configuration | Single N-Channel | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Generation | 7th Gen CoolMOS (successor to P6) | β |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID) at Tc=25C | β | 20.2 A |
| Power Dissipation (PD) at Tc=25C | β | 151 W |
| On-Resistance RDS(on) max at VGS=10V | β | 190 mOhm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | β | 3.5 V (typ) |
| Total Gate Charge (Qg) typ | β | 32 nC |
| MSL Level | β | 1 |
| Avalanche Energy Rated | β | Yes (EAS per datasheet) |